absolute maximum ratings t a =25c unless otherwise noted AOT460 v ds (v) = 60v i d = 85 a (v gs = 10v) r ds(on) < 7.5m w (v gs = 10v) the AOT460/l uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in ups, high current switching applications. AOT460and AOT460l are electrically identical. g d s symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max r q ja 45 60 r q jc 0.45 0.56 a mj -55 to 175 t c =100c avalanche current c 80 repetitive avalanche energy l=0.1mh c 320 i d 85 66 340 junction and storage temperature range a p d c 268 134 pulsed drain current c power dissipation b t c =25c continuous drain current g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage 60 w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a steady-state c/w www.freescale.net.cn 1/6 n-channel enhancement mode field effect transistor general description features
symbol min typ max units bv dss 60 v 10 t j =55c 50 i gss 100 na v gs(th) 2 2.95 4 v i d(on) 340 a 6.3 7.5 t j =125c 10.5 13 g fs forward transconductance 90 s v sd 0.7 1 v i s 85 a c iss 3800 4560 pf c oss 430 pf c rss 190 pf r g 1.5 2.3 w q g (10v) 68 88 nc q g (4.5v) 33 nc q gs 15 nc q gd 19 nc t d(on) 18 ns t r 35 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =30v, r l =1 w , total gate charge v gs =10v, v ds =30v, i d =30a gate source charge gate drain charge total gate charge m w i s =1a, v gs =0v v ds =5v, i d =30a gate resistance v gs =0v, v ds =0v, f=1mhz zero gate voltage drain current gate-body leakage current diode forward voltage static drain-source on-resistance r ds(on) i dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m a gate threshold voltage v ds =v gs , i d =250 m a v ds =60v, v gs =0v v ds =0v, v gs =20v drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =30a reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters t r 35 ns t d(off) 44 ns t f 23 ns t rr 53 64 ns q rr 98 nc body diode reverse recovery charge i f =30a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =1 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =30a, di/dt=100a/ m s a: the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. g. the maximum current rating is limited by bond-wi res. rev1: jan. 2009 www.freescale.net.cn 2/6 AOT460 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 i d (a) v gs (volts) figure 2: transfer characteristics 6 6.2 6.4 6.6 6.8 7 7.2 0 20 40 60 80 100 r ds(on) (m w w w w ) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 - 50 - 25 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v, 30a 25 c 125 c v ds =5v v gs =10v 0 50 100 150 200 250 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics v gs =4v 5v 10v 8v - 4.5v 6 0 20 40 60 80 100 i d (a) figure 3: on-resistance vs. drain current and gate voltage 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 125 c -40 c 0.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 0 5 10 15 20 25 4 8 12 16 20 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage - 40 c i d =30a 25 c 125 www.freescale.net.cn 3/6 AOT460 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2 4 6 0 15 30 45 60 capacitance (nf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =30v i d =30a 1 10 100 1000 1 10 100 i d (a) t j(max) =175 c t c =25 c r ds(on) limited 500 m s 5ms 1ms 10 m s dc 100 1000 10000 0.0001 0.001 0.01 0.1 1 10 power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.45 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 1 10 100 v ds (v) figure 9: maximun forward biased safe operating area (note f) t j(max) =175 c t c =25 c 100 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) www.freescale.net.cn 4/6 AOT460 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note b) 0 20 40 60 80 100 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 12: current de-rating (note b) 0 25 50 75 100 125 150 i d (a), peak avalanche current t a =150 c t a =25 c 0 25 0.000001 0.00001 0.0001 0.001 i d (a), peak avalanche current time in avalanche, t a (s) figure 10: single pulse avalanche capability www.freescale.net.cn 5/6 AOT460 n-channel enhancement mode field effect transistor
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AOT460 n-channel enhancement mode field effect transistor
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